A SOLUTION TO BORON CONTAMINATION AT THE SUBSTRATE EPILAYER INTERFACE OF SILICON GROWN BY MOLECULAR-BEAM EPITAXY

被引：30

作者：

KUBIAK, RAA ^{[1
]}

LEONG, WY ^{[1
]}

DOWSETT, MG ^{[1
]}

MCPHAIL, DS ^{[1
]}

HOUGHTON, R ^{[1
]}

PARKER, EHC ^{[1
]}

机构：

[1] CITY LONDON POLYTECH,SIR JOHN CASS FAC PHYS SCI & TECH,SOLID STATE MBE RES GRP,LONDON EC3N 2EY,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.573745

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1905 / 1907

页数：3

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[2]

HARDEMAN R, COMMUNICATION

[3]

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[4] SI-BEAM RADIATION CLEANING IN MOLECULAR-BEAM EPITAXY [J].

KUGIMIYA, K ;

HIROFUJI, Y ;

MATSUO, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05) :564-567

[5]

LEONG WY, 1985, SILICON MOL BEAM EPI, V85, P140

[6]

OSTROM RM, 1986, APPL PHYS LETT, V48, P22

YANG, HT ;

MOONEY, PM .

[8]

1985, SILICON MOL BEAM EPI, V85