GAAS OPTOELECTRONIC INTEGRATED RECEIVER WITH HIGH-OUTPUT FAST-RESPONSE CHARACTERISTICS

被引：21
作者：
HAMAGUCHI, H
MAKIUCHI, M
KUMAI, T
WADA, O
机构：
[1] Fujitsu Laboratories Ltd., Atsugi 243-01, 10–1, MorinosatoWakamiya
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 01期
关键词：
D O I：
10.1109/EDL.1987.26543
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For obtaining high-output level and high-speed response in a GaAs-based optoelectronic integrated receiver, a circuit involving a two-stage amplifier was first designed and fabricated. A high sensitivity of 400 V/W has been achieved while preserving a high-speed response of 2-Gbit/s nonreturn to zero (NRZ). Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码：39 / 41
页数：3
相关论文
共 8 条
[1]   GAAS INTEGRATED OPTOELECTRONICS [J].
BARCHAIM, N ;
MARGALIT, S ;
YARIV, A ;
URY, I .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1372-1381
[2]   HIGH-SPEED RESPONSE CHARACTERISTICS OF GAAS OPTOELECTRONIC INTEGRATED RECEIVERS [J].
HAMAGUCHI, H ;
MAKIUCHI, M ;
WADA, O .
ELECTRONICS LETTERS, 1986, 22 (09) :501-502
[3]   MONOLITHIC INTEGRATION OF A METAL-SEMICONDUCTOR METAL PHOTODIODE AND A GAAS PREAMPLIFIER [J].
ITO, M ;
WADA, O ;
NAKAI, K ;
SAKURAI, T .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :531-532
[4]   PLANAR MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A GAAS PRE-AMPLIFIER [J].
KOLBAS, RM ;
ABROKWAH, J ;
CARNEY, JK ;
BRADSHAW, DH ;
ELMER, BR ;
BIARD, JR .
APPLIED PHYSICS LETTERS, 1983, 43 (09) :821-823
[5]   MONOLITHIC GAAS PHOTORECEIVER FOR HIGH-SPEED SIGNAL-PROCESSING APPLICATIONS [J].
LEE, WS ;
ADAMS, GR ;
MUN, J ;
SMITH, J .
ELECTRONICS LETTERS, 1986, 22 (03) :147-148
[6]   A MONOLITHIC 4-CHANNEL PHOTORECEIVER INTEGRATED ON A GAAS SUBSTRATE USING METAL-SEMICONDUCTOR-METAL PHOTODIODES AND FETS [J].
MAKIUCHI, M ;
HAMAGUCHI, H ;
KUMAI, T ;
ITO, M ;
WADA, O ;
SAKURAI, T .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :634-635
[7]  
NAKAMOTO H, UNPUB
[8]  
WADA O, 1986, IEEE J LIGHTWAVE TEC, V4, P1694
1