LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF TANTALUM PENTOXIDE THIN-LAYERS

被引：30
|
作者：
BURTE, EP
RAUSCH, N
机构：
[1] Fraunhofer-Institut für Integrierte Schaltungen, Bereich Bauelementetechnologie, Erlangen, D-91058
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷
关键词：
D O I：
10.1016/0022-3093(95)00219-7
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Tantalum pentoxide thin films were grown by a low pressure chemical vapour deposition process using a metalorganic tantalum precursor material. After characterizing the deposition process, the stoichiometry, structure and electrical properties of the tantalum oxide thin films were investigated before and after annealing in oxygen and nitrogen at various temperatures. At annealing temperatures higher than 700 degrees C, the as-deposited amorphous film becomes polycrystalline. Refractive index, dielectric permittivity and leakage current behaviour are improved by this phase transition.
引用
收藏
页码：425 / 429
页数：5
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