ELECTRICAL-PROPERTIES OF CW LASER-ANNEALED ION-IMPLANTED POLYCRYSTALLINE SILICON

被引：19

作者：

ROULET, ME ^{[1
]}

DUTOIT, M ^{[1
]}

LUTHY, W ^{[1
]}

AFFOLTER, K ^{[1
]}

机构：

[1] UNIV BERN,INST APPL PHYS,CH-3012 BERN,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 08期

关键词：

D O I：

10.1063/1.92064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：737 / 739

页数：3

共 12 条

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[4]

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :290-293

[6] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

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[7]

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[8]

Runyan W.R, 1975, SEMICONDUCTOR MEASUR

[9] DIRECT MEASUREMENT OF ELECTRON-EMISSION FROM DEFECT STATES AT SILICON GRAIN-BOUNDARIES [J].

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[10] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

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