THE VAPOR EPITAXIAL-GROWTH OF SINGLE-CRYSTAL DIAMOND FILM

With H-2 and CH3COCH, used as the source gases, the diamond epitaxial films were obtained on the sythesized single-crystal diamond (100), (110) and (111) faces by means of the microwave plasma-assisted chemical-vapor-deposition (CVD) method. Epitaxial growth spirals and growth steps can be observed by scanning electron micrographs. Using micro Raman spectra method, we analysed the contents of graphites and other forms of carbon in the single-crystal diamond thin films. The experimental results showed that there are no other forms of carbon in the epitaxial films. Analysis results of reflection electron diffraction showed that the epitaxial diamond films on diamond (100) and (110) surfaces are single-crystal diamond films.