CRYSTAL-STRUCTURE AND THERMAL-OXIDATION OF LASER-RECRYSTALIZED POLYCRYSTALLINE SILICON

被引：23

作者：

KAMINS, TI ^{[1
]}

LEE, KF ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 07期

关键词：

D O I：

10.1063/1.91576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：550 / 553

页数：4

共 6 条

[1] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

GAT, A ;

GERZBERG, L ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778

[2] OXIDATION OF PHOSPHORUS-DOPED LOW-PRESSURE AND ATMOSPHERIC-PRESSURE CVD POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) :838-844

[3] MONOLITHIC INTEGRATED-CIRCUIT FABRICATED IN LASER-ANNEALED POLYSILICON [J].

KAMINS, TI ;

LEE, KF ;

GIBBONS, JF ;

SARASWAT, KC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :290-293

[4] STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS [J].

KAMINS, TI ;

MANDURAH, MM ;

SARASWAT, KC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :927-932

[5] FIELD-EFFECTS IN POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI .

SOLID-STATE ELECTRONICS, 1972, 15 (07) :789-&

[6] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J].

LEE, KF ;

GIBBONS, JF ;

SARASWAT, KC .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :173-175

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