ISOTHERMAL ANNEALING OF 0.97-EV LUMINESCENCE IN ELECTRON-IRRADIATED SI

被引:9
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WONG, EH
STREETMA.BG
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10.1063/1.1660038
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O59 [应用物理学];
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页码:5882 / +
页数:1
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[1]  
BORTNIK MV, 1967, SOV PHYS SEMICOND+, V1, P290
[2]   1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].
CHENG, LJ ;
CORELLI, JC ;
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW, 1966, 152 (02) :761-+
[3]   Recombination luminescence in irradiated silicon. Effects of thermal annealing and lithium impurity [J].
JOHNSON ES ;
COMPTON WD .
Radiation Effects, 1971, 9 (1-2) :89-92
[4]  
Jones C. E., 1971, Radiation Effects, V9, P83, DOI 10.1080/00337577108242037
[5]   PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN SILICON - DIVACANCY-ASSOCIATED ENERGY LEVELS [J].
KALMA, AH ;
CORELLI, JC .
PHYSICAL REVIEW, 1968, 173 (03) :734-+
[6]   RECOMBINATION LUMINESCENCE IN IRRADIATED SILICON [J].
SPRY, RJ ;
COMPTON, WD .
PHYSICAL REVIEW, 1968, 175 (03) :1010-+
[7]   DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE OF DIVACANCY [J].
WATKINS, GD ;
CORBETT, JW .
PHYSICAL REVIEW, 1965, 138 (2A) :A543-+
[8]  
YUKHNEVICH AV, 1967, FIZ TVERD TELA+, V8, P2571