EFFECT OF THE INTERFACE ON RADIATION DEFECT FORMATION IN GALLIUM-ARSENIDE

被引：16
作者：
BORKOVSKAYA, OY
DMITRUK, NL
KONAKOVA, RV
LITOVCHENKO, VG
TKHORIK, YA
SHAKHOVTSOV, VI
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1979年 / 42卷 / 3-4期
关键词：
D O I：
10.1080/00337577908209143
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
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页码：249 / 252
页数：4
相关论文
共 5 条
[1]   INVESTIGATION OF RADIATION DEFECTS IN GAAS BY MEANS OF SCHOTTKY DIODE CHARACTERISTICS [J].
BORKOVSKAYA, OY ;
DMITRUK, NL ;
KONAKOVA, RV ;
TKHORIK, YA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (01) :K55-K58
[2]  
DMITRUK NL, 1973, FIZ TEKH POLUPROV, V7, P671
[3]   EFFECT OF DEEP IMPURITY LEVELS ON SCHOTTKY-BARRIER DIODE CHARACTERISTICS [J].
KOROL, AN ;
KITSAI, MY ;
STRIKHA, VI ;
SHEKA, DI .
SOLID-STATE ELECTRONICS, 1975, 18 (05) :375-379
[4]  
Lang D. V., 1977, International Conference on Radiation Effects in Semiconductors, P70
[5]  
Zuev V. A., 1974, FIZ TEKH POLUPROV, V8, P1651
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