MECHANISMS FOR SUCCESS OR FAILURE OF DIFFUSION-BARRIERS BETWEEN ALUMINUM AND SILICON

被引：35
作者：
HARPER, JME
HORNSTROM, SE
THOMAS, O
CHARAI, A
KRUSINELBAUM, L
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词：
D O I：
10.1116/1.575814
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：875 / 880
页数：6
相关论文
共 31 条
[1]  
AFFOLTER K, 1985, MATERIALS RES SOC S, V47, P167
[2]   ALUMINUM SPIKING AT CONTACT WINDOWS IN AL/TI-W/SI [J].
CHANG, PH ;
HAWKINS, R ;
BONIFIELD, TD ;
MELTON, LA .
APPLIED PHYSICS LETTERS, 1988, 52 (04) :272-274
[3]   A COMPARISON BETWEEN ALUMINUM AND COPPER INTERACTIONS WITH HIGH-TEMPERATURE OXIDE AND NITRIDE DIFFUSION-BARRIERS [J].
CHARAI, A ;
HORNSTROM, SE ;
THOMAS, O ;
FRYER, PM ;
HARPER, JME .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :784-789
[4]   CHEMICAL VAPOR-DEPOSITION OF RUTHENIUM AND RUTHENIUM DIOXIDE FILMS [J].
GREEN, ML ;
GROSS, ME ;
PAPA, LE ;
SCHNOES, KJ ;
BRASEN, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2677-2685
[5]  
Hansen M., 1985, CONSTITUTION BINARY
[6]   INSITU FORMATION OF DIFFUSION BARRIERS IN THIN-FILM METALLIZATION SYSTEMS [J].
HOLLOWAY, PH ;
NELSON, CC .
THIN SOLID FILMS, 1976, 35 (01) :L13-L16
[7]  
HORNSTROM SE, 1988, J VAC SCI TECHNOL A, V6, P1650, DOI 10.1116/1.575302
[8]  
HORNSTROM SE, IN PRESS SURF INTERF
[9]   AMORPHOUS DIFFUSION-BARRIERS IN AL-SI AND AU-SI CONTACTS [J].
HUNG, LS ;
COLGAN, EG ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4177-4181
[10]  
JOSHI RV, 1986, MRS P, V71, P309
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