TRANSIENT PHOTOCURRENT STUDY OF THE DANGLING BOND CENTER IN UNDOPED AMORPHOUS-SILICON

被引：5
作者：
HATTORI, K
OKAMOTO, H
HAMAKAWA, Y
机构：
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1988年 / 57卷 / 01期
关键词：
D O I：
10.1080/13642818808205720
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：13 / 29
页数：17
相关论文
共 40 条
[1]   DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON [J].
ADLER, D .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :3-14
[2]  
AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83
[3]   OPTICAL-PROPERTIES OF GOLD ACCEPTOR AND DONOR LEVELS IN SILICON [J].
BRAUN, S ;
GRIMMEISS, HG .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2658-2665
[4]   IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].
COHEN, JD ;
HARBISON, JP ;
WECHT, KW .
PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112
[5]  
COHEN JD, 1984, SEMICONDUCT SEMIMET, V21, P9
[6]   ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J].
DERSCH, H ;
STUKE, J ;
BEICHLER, J .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01) :265-274
[7]   DETERMINATION OF THE RECOMBINATION RATE CONSTANTS IN AMORPHOUS-SILICON FROM DOUBLE-INJECTION EXPERIMENTS [J].
DOGHMANE, A ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (06) :463-475
[8]   ASSESSMENT OF LATTICE-RELAXATION EFFECTS IN TRANSITIONS FROM MOBILITY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON USING TRANSIENT PHOTOCAPACITANCE TECHNIQUES [J].
GELATOS, AV ;
COHEN, JD ;
HARBISON, JP .
APPLIED PHYSICS LETTERS, 1986, 49 (12) :722-724
[9]   LIGHT-INDUCED METASTABLE EFFECT ON THE SHORT-LIVED PHOTOINDUCED MIDGAP ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON [J].
HIRABAYASHI, I ;
MORIGAKI, K .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :433-436
[10]   DEEP IMPURITIES IN SEMICONDUCTORS .2. THE OPTICAL-CROSS-SECTION [J].
INKSON, JC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (07) :1093-1101
1234