EXCIMER LASER INSITU TREATMENT OF GAAS-SURFACES - ELECTRICAL-PROPERTIES OF TUNGSTEN/GAAS DIODES

[1] EXCIMER LASER PROJECTION ETCHING OF GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 803 - 805

[2] OHMIC CONTACT FORMATION ON INP BY PULSED LASER PHOTOCHEMICAL DOPING [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 847 - 849

[3] EFFICIENT GAAS SOLAR-CELLS FORMED BY UV LASER CHEMICAL DOPING [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 722 - 724

[4] ARF EXCIMER-LASER-STIMULATED GROWTH OF POLYCRYSTALLINE GAAS THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1410 - 1414

[5] EHRLICH DJ, 1980, APPL PHYS LETT, V36, P916, DOI 10.1063/1.91366

[6] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 698 - 700

[7] EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718

[8] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[9] ELECTRICAL STUDY OF SCHOTTKY BARRIERS ON ATOMICALLY CLEAN GAAS(110) SURFACES [J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1146 - 1159

[10] SINKA AK, 1973, APPL PHYS LETT, V23, P666

[1] EXCIMER LASER PROJECTION ETCHING OF GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 803 - 805

[2] OHMIC CONTACT FORMATION ON INP BY PULSED LASER PHOTOCHEMICAL DOPING [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 847 - 849

[3] EFFICIENT GAAS SOLAR-CELLS FORMED BY UV LASER CHEMICAL DOPING [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 722 - 724

[4] ARF EXCIMER-LASER-STIMULATED GROWTH OF POLYCRYSTALLINE GAAS THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1410 - 1414

[5] EHRLICH DJ, 1980, APPL PHYS LETT, V36, P916, DOI 10.1063/1.91366

[6] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 698 - 700

[7] EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718

[8] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[9] ELECTRICAL STUDY OF SCHOTTKY BARRIERS ON ATOMICALLY CLEAN GAAS(110) SURFACES [J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1146 - 1159

[10] SINKA AK, 1973, APPL PHYS LETT, V23, P666