INFLUENCE OF SUBSTRATE TEMPERATURE ON GAAS EPITAXIAL DEPOSITION RATES

被引：110

作者：

SHAW, DW

机构：

来源：

关键词：

D O I：

10.1149/1.2411231

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：405 / &

共 9 条

[1] KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION [J].

BYLANDER, EG .

[2]

DAY GF, 1966, AF336151988 CONTR

[3]

MAGOMEDOV KA, 1965, SOV PHYS CRYSTALLOGR, V9, P756

[4]

MAGOMEDOV KA, 1964, KRISTALLOGRAFIYA, V9, P902

[5] ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS [J].

REISMAN, A ;

ROHR, R .

ROSNER, DE ;

ALLENDORF, HD .

[7]

SANGSTER RC, 1962, COMPOUNDS SEMICONDUC, P241

[8] EPITAXIAL DEPOSITION OF GAAS IN AN ARGON ATMOSPHERE [J].

TAYLOR, RC .

[9]

WILLARDSON RK, 1962, COMPOUND SEMICOND ED, P241