Acceptor compensation in nitrogen doped zinc selenide

被引:0
作者
Song, CD
Wu, YH
Suezawa, M
Nishiyama, F
KatayamaYoshida, H
Yao, T
机构
[1] TOHOKU UNIV,MAT RES INST,SENDAI,MIYAGI 980,JAPAN
[2] HIROSHIMA UNIV,DEPT APPL PHYS & CHEM,HIGASHIHIROSHIMA 724,JAPAN
[3] NATL INST ADV INERDISCIPLINARY RES,JOINT RES CTR ATOM TECHNOL,TSUKUBA,IBARAKI 305,JAPAN
来源
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷
关键词
ZnSe:N; acceptor compensation; local vibration mode; N local site;
D O I
10.4028/www.scientific.net/MSF.196-201.297
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The compensating centers associated with nitrogen in N-doped ZnSe are investigated. A nitrogen local vibration mode is observed in N doped ZnSe grown by MBE using FTIR. This nitrogen absorption band indicates that most of doped N atoms substitute Se sites and forms Zn-N bond having a tetrahedral symmetry. Ion beam analysis is performed on N-ion implanted and N-2-ion implanted ZnSe to get insight into the lattice location of N-2 in the ZnSe lattice. It is found that N atoms are located at substitutional sites in ZnSe, while N-2 in N-2-ion implanted ZnSe are located at random sites. It is suggested that there is no evidence for existence of N-2 sites in MBE grown samples.
引用
收藏
页码:297 / 301
页数:5
相关论文
共 11 条
  • [1] SELF-COMPENSATION IN NITROGEN-DOPED ZNSE
    CHADI, DJ
    TROULLIER, N
    [J]. PHYSICA B, 1993, 185 (1-4): : 128 - 131
  • [2] FIRST-PRINCIPLES STUDY OF THE COMPENSATION MECHANISM FOR NITROGEN ACCEPTORS IN ZNSE
    CHEONG, BH
    PARK, CH
    CHANG, KJ
    [J]. PHYSICAL REVIEW B, 1995, 51 (16): : 10610 - 10614
  • [3] OBSERVATIONS ON THE LIMITS TO P-TYPE DOPING IN ZNSE
    FAN, Y
    HAN, J
    HE, L
    GUNSHOR, RL
    BRANDT, MS
    WALKER, J
    JOHNSON, NM
    NURMIKKO, AV
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (08) : 1001 - 1003
  • [4] COMPENSATION PROCESSES IN NITROGEN DOPED ZNSE
    HAUKSSON, IS
    SIMPSON, J
    WANG, SY
    PRIOR, KA
    CAVENETT, BC
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (18) : 2208 - 2210
  • [5] ACCEPTOR DOPING IN ZNSE VERSUS ZNTE
    LAKS, DB
    VAN DE WALLE, CG
    NEUMARK, GF
    PANTELIDES, ST
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (10) : 1375 - 1377
  • [6] DOPING OF NITROGEN ACCEPTORS INTO ZNSE USING A RADICAL BEAM DURING MBE GROWTH
    OHKAWA, K
    KARASAWA, T
    MITSUYU, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 797 - 801
  • [7] EPITAXIAL-GROWTH OF P-TYPE ZNMGSSE
    OKUYAMA, H
    KISHITA, Y
    MIYAJIMA, T
    ISHIBASHI, A
    AKIMOTO, K
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (07) : 904 - 906
  • [8] ION-BEAM ANALYSIS OF ZNSE
    SASAKI, Y
    YOSHIDA, K
    NISHIYAMA, F
    YAO, T
    ZHU, Z
    MORI, H
    KAWASHIMA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4B): : L449 - L451
  • [9] VIBRATIONAL-MODE FOR NITROGEN IN ZINC SELENIDE
    STEIN, HJ
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (12) : 1520 - 1522
  • [10] SUZUKI M, 1993, 1993 INT C SOL STAT, P74