MOLECULAR-DYNAMICS SIMULATION OF (100)INGAAS/GAAS STRAINED-LAYER RELAXATION PROCESSES

被引：0

作者：

ASHU, PA

JEFFERSON, JH

CULLIS, AG

HAGSTON, WE

WHITEHOUSE, CR

机构：

[1] UNIV HULL,DEPT APPL PHYS,KINGSTON HULL HU6 7RX,N HUMBERSIDE,ENGLAND

[2] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80202-N

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Molecular dynamics simulations on In1-xGaxAs/GaAs(100) systems are performed showing the dynamics of threading dislocations in the overlayers and the formation of misfit dislocations at the heterojunction interface. The developed code, using a modified Tersoff potential, simulates the threading dislocation dynamics in the InGaAs overlayer, and also the formation of interface misfit dislocations. Values for critical thicknesses are predicted and the atomic structure of the dislocation cores are determined.

引用

页码：176 / 179

页数：4

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