ELECTRICAL-PROPERTIES OF OXIDES GROWN ON STRAINED SIGE LAYER AT LOW-TEMPERATURES IN A MICROWAVE OXYGEN PLASMA

被引：49

作者：

MUKHOPADHYAY, M ^{[1
]}

RAY, SK ^{[1
]}

MAITI, CK ^{[1
]}

NAYAK, DK ^{[1
]}

SHIRAKI, Y ^{[1
]}

机构：

[1] UNIV TOKYO, RCAST, MEGURO KU, TOKYO 153, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 07期

关键词：

D O I：

10.1063/1.112193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microwave plasma oxidation of strained Si1-xGex layer has been carried out at low temperatures (150-200-degrees-C). The chemical properties of the oxide investigated by x-ray photoelectron spectroscopy show the formation of single phase mixed oxides consisting a SiO2 and GeO2, without any Ge pileup on the surface or at the substrate-oxide interface. Electrical properties of the oxides show a moderately low value of fixed oxide charge and interface trap density. Grown oxides exhibit low leakage current (10(-8) A/cm2) and high breakdown strength (5-10 MV/cm), and are useful for a gate dielectric in metal-oxide semiconductor field effect transistor.

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页码：895 / 897

页数：3

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