INFLUENCE OF ATOMIC HYDROGEN ON THE SURFACE AND THE NEAR-SURFACE LAYERS OF GERMANIUM CRYSTALS

被引：0
|
作者：
Zhavzharov, E. L. [1 ]
Matyushin, V. M. [1 ]
机构：
[1] Zaporizhzhya Natl Tech Univ, 64 Zhukovskyi Str, Zaporizhzhya 69063, Ukraine
来源：
UKRAINIAN JOURNAL OF PHYSICS | 2005年 / 50卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Influence of atomic hydrogen on single crystals of germanium at temperatures of 300-310 K, the pressure of 20 Pa in the working chamber, and the concentration of atomic hydrogen of about 10(19) m(-3) has been investigated. The specimens of n-Ge with a specific resistance rho = 15 Omega.cm underwent a treatment for 100-300 s. To study the influence of atomic hydrogen on crystals, we measured the current-voltage characteristics (CVCs), specimen resistances, and the work function by the dynamic capacitor method. The influence of atomic hydrogen has been shown to change the electrophysical parameters of crystals, including the modification of a charge state of near-surface layers. A physical mechanism which explains the results of researches has been proposed.
引用
收藏
页码：52 / 56
页数：5
相关论文
共 50 条
  • [1] Studying Near-Surface Layers of Germanium Implanted with Cobalt Ions
    V. V. Bazarov
    V. A. Shustov
    N. M. Lyadov
    I. A. Faizrakhmanov
    I. V. Yanilkin
    S. M. Khantimerov
    R. R. Garipov
    R. R. Fatykhov
    N. M. Suleimanov
    V. F. Valeev
    Technical Physics Letters, 2019, 45 : 1047 - 1049
  • [2] Studying Near-Surface Layers of Germanium Implanted with Cobalt Ions
    Bazarov, V. V.
    Shustov, V. A.
    Lyadov, N. M.
    Faizrakhmanov, I. A.
    Yanilkin, I., V
    Khantimerov, S. M.
    Garipov, R. R.
    Fatykhov, R. R.
    Suleimanov, N. M.
    Valeev, V. F.
    TECHNICAL PHYSICS LETTERS, 2019, 45 (10) : 1047 - 1049
  • [3] INFLUENCE OF ION-IMPLANTATION ON THE PROPERTIES OF NEAR-SURFACE LAYERS OF LIF CRYSTALS
    URUSOVSKAYA, AA
    KNAB, GG
    VASEV, EN
    GUSEVA, MI
    IONOVA, ES
    GORDEEVA, GV
    KRISTALLOGRAFIYA, 1991, 36 (01): : 175 - 180
  • [4] ON ANOMALOUS PLASTICITY OF NEAR-SURFACE LAYERS IN SEMICONDUCTING CRYSTALS
    ALEKHIN, VP
    GUSEV, OV
    TREFILOV, VI
    SHORSHOR.MK
    DOKLADY AKADEMII NAUK SSSR, 1969, 188 (03): : 548 - +
  • [5] Hydrogen microdoping of the near-surface layers of gallium arsenide
    Anisimov, VV
    Demkin, VP
    Kvint, IA
    Mel'nichuk, SV
    Semukhin, BS
    TECHNICAL PHYSICS LETTERS, 2000, 26 (04) : 284 - 287
  • [6] Hydrogen microdoping of the near-surface layers of gallium arsenide
    V. V. Anisimov
    V. P. Demkin
    I. A. Kvint
    S. V. Mel’nichuk
    B. S. Semukhin
    Technical Physics Letters, 2000, 26 : 284 - 287
  • [7] Physicochemical properties of the surface and near-surface region of epitaxial n-GaAs layers modified by atomic hydrogen
    Torkhov, NA
    Eremeev, SV
    SEMICONDUCTORS, 2000, 34 (02) : 181 - 188
  • [8] Physicochemical properties of the surface and near-surface region of epitaxial n-GaAs layers modified by atomic hydrogen
    N. A. Torkhov
    S. V. Eremeev
    Semiconductors, 2000, 34 : 181 - 188
  • [9] Simulation of structural transformations in modified near-surface layers of crystals
    Borodin Y.
    Mantina A.
    Materials Science Forum, 2019, 970 : 276 - 282
  • [10] INFLUENCE OF SURFACE STATE AND TITANIUM FILMS ON DISLOCATIONAL STRUCTURE OF NEAR-SURFACE LAYERS OF MOLYBDENUM SINGLE-CRYSTALS
    AMONENKO, VM
    BONDAREN.NP
    AZHAZHA, VM
    SHAPOVAL, BI
    KOVTUN, GP
    FIZIKA METALLOV I METALLOVEDENIE, 1972, 34 (02): : 385 - &
12345