Effect of Electron Trapping Centers on Electrical and Photoelectric Properties of PbSnTe : In

被引：0
|
作者：
Klimov, A. E. [1 ]
Shumsky, V. N. [1 ]
机构：
[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Pr Akad Lavrenteva 13, Novosibirsk 630090, Russia
来源：
OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2011年 / 47卷 / 05期
关键词：
trapping centers; PbSnTe : In; injection from contacts;
D O I：
10.3103/S8756699011050244
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Results of experimental studies presenting data on the effect of electron trapping centers on the properties of Pb1-xSnxTe : In with x approximate to 0.24-0.29 at temperatures below 20 K are described. A model is developed that consistently explains a number of phenomena in Pb1-xSnxTe : In solid solutions, including current-voltage characteristics in the absence of light resulting from the injection from contacts and space-charge limited current when electrons are captured in traps distributed in energy in the bandgap, photoelectric phenomena in the infrared and terahertz spectral ranges, features of galvanomagnetic phenomena, and fluctuations and autooscillations of current in the absence or presence of light.
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页码：442 / 451
页数：10
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