STRUCTURE AND ADSORPTION CHARACTERISTICS OF (III) AND (III-) SURFACE OF INSB CLEANED BY ION BOMBARDMENT AND ANNEALING

被引：52

作者：

HANEMAN, D

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1960年 / 14卷

关键词：

D O I：

10.1016/0022-3697(60)90224-9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：162 / 168

页数：7

共 11 条

[1] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].

FARNSWORTH, HE ;

SCHLIER, RE ;

GEORGE, TH ;

BURGER, RM .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1150-1161

[2] ION BOMBARDMENT-CLEANING OF GERMANIUM AND TITANIUM AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].

FARNSWORTH, HE ;

SCHLIER, RE ;

GEORGE, TH ;

BURGER, RM .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) :252-253

[3] PHOTOELECTRIC EMISSION AND WORK FUNCTIONS OF INSB, GAAS, BI2TE3 AND GERMANIUM [J].

HANEMAN, D .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) :205-&

[4]

HANEMAN D, 1959, J APPL PHYS

[5] INFLUENCE OF CRYSTAL ORIENTATION ON THE SURFACE BEHAVIOR OF INSB [J].

LAVINE, MC ;

ROSENBERG, AJ ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1131-1132

[6]

ROSENBERG AJ, 1958, Q PROG REP LINCOLN L, P13

[7]

Schlier R.E., 1957, SEMICONDUCTOR SURFAC, P3

[8] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J].

SCHLIER, RE ;

FARNSWORTH, HE .

JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) :917-926

[9] ADSORPTION OF OXYGEN AND CARBON MONOXIDE ON TUNGSTEN [J].

SCHLIER, RE .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1162-1167

[10]

WHETTEN NR, 1959, 19TH ANN C PHYS EL, P147

← 1 2 →