THEORY OF SURFACE STATES

被引：1187
作者：
HEINE, V
机构：
来源：
PHYSICAL REVIEW | 1965年 / 138卷 / 6A期
关键词：
D O I：
10.1103/PhysRev.138.A1689
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：1689 / &
相关论文
共 38 条
[1]   COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J].
ALLEN, FG ;
GOBELI, GW .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :597-&
[2]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[3]   VARIATION OF CONTACT POTENTIAL WITH CRYSTAL FACE FOR GERMANIUM [J].
ALLEN, FG ;
FOWLER, AB .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (1-2) :107-114
[4]  
ALLEN FG, 1962, REPORT INTERNATIONAL, P818
[5]  
ALLEN FR, PRIVATE COMMUNICATIO
[6]  
ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697
[7]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[8]  
BARDEEN JM, PRIVATE COMMUNICATIO
[9]   ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J].
BRUST, D .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1337-&
[10]   CANCELLATION OF KINETIC AND POTENTIAL ENERGY IN ATOMS, MOLECULES, AND SOLIDS [J].
COHEN, MH ;
HEINE, V .
PHYSICAL REVIEW, 1961, 122 (06) :1821-&
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