ANTIMONY-BASED STRAINED-LAYER 2-2.5-MU-M QUANTUM-WELL LASERS

被引：10
|
作者：
GHITI, A
OREILLY, EP
机构：
[1] Dept. of Phys., Surrey Univ., Guildford
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 08期
关键词：
D O I：
10.1088/0268-1242/8/8/028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present calculations which show that compressive or tensile strain introduced into the well material of InGaAsSb/AlGaSb quantum well lasers reduces the threshold current density compared with double heterostructure and lattice-matched lasers. The operating wavelength can be close to 2.55 mum, the region of lowest attenuation in fluoride glass fibres.
引用
收藏
页码：1655 / 1661
页数：7
相关论文
共 50 条
  • [41] THEORETICAL-ANALYSIS OF GAIN SATURATION COEFFICIENTS IN INP-BASED STRAINED-LAYER QUANTUM-WELL LASERS
    SEKI, SJ
    YAMANAKA, T
    YOKOYAMA, K
    SOTIRELIS, P
    HESS, K
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) : 2971 - 2973
  • [42] STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES
    CAMRAS, MD
    BROWN, JM
    HOLONYAK, N
    NIXON, MA
    KALISKI, RW
    LUDOWISE, MJ
    DIETZE, WT
    LEWIS, CR
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6183 - 6189
  • [43] CARRIER HEATING AND SPECTRAL HOLE BURNING IN STRAINED-LAYER QUANTUM-WELL LASER-AMPLIFIERS AT 1.5-MU-M
    HALL, KL
    LENZ, G
    IPPEN, EP
    KOREN, U
    RAYBON, G
    APPLIED PHYSICS LETTERS, 1992, 61 (21) : 2512 - 2514
  • [44] PROPERTIES OF INXGA1-XAS-GAAS STRAINED-LAYER QUANTUM-WELL INJECTION-LASERS
    LAIDIG, WD
    LIN, YF
    CALDWELL, PJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1975 - 1975
  • [45] Failure analysis of InGaAs/GaAs strained-layer quantum-well lasers using a digital OBIC monitor
    Takeshita, T
    Sugo, M
    Sasaki, T
    Tohmori, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (02) : 211 - 217
  • [46] High-performance 980-nm strained-layer InGaAs/GaAs quantum-well lasers
    Bugajski, M
    Reginski, K
    Mroziewicz, B
    Kubica, JM
    Sajewicz, P
    Piwonski, T
    Zbroszczyk, M
    OPTICA APPLICATA, 2001, 31 (02) : 267 - 271
  • [47] Spontaneous radiative efficiency and gain characteristics of strained-layer InGaAs-GaAs quantum-well lasers
    Tsvid, Gene
    Kirch, Jeremy
    Mawst, Luke J.
    Kanskar, Manoj
    Cai, Jason
    Arif, Ronald A.
    Tansu, Nelson
    Smowton, Peter A.
    Blood, Peter
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (7-8) : 732 - 739
  • [48] DOMINANT MECHANISMS FOR THE TEMPERATURE SENSITIVITY OF 1.3 MU-M INP-BASED STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS
    SEKI, S
    OOHASI, H
    SUGIURA, H
    HIRONO, T
    YOKOYAMA, K
    APPLIED PHYSICS LETTERS, 1995, 67 (08) : 1054 - 1056
  • [49] PARTLY GAIN-COUPLED 1.55-MU-M STRAINED-LAYER MULTI-QUANTUM-WELL DFB LASERS
    LI, GP
    MAKINO, T
    MOORE, R
    PUETZ, N
    LEONG, KW
    LU, H
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1736 - 1742
  • [50] Non-Markovian gain of strained-layer quantum-well lasers with many-body effects
    Ahn, D
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2, 1998, 3283 : 121 - 130
12345