ANTIMONY-BASED STRAINED-LAYER 2-2.5-MU-M QUANTUM-WELL LASERS

被引：10
作者：
GHITI, A
OREILLY, EP
机构：
[1] Dept. of Phys., Surrey Univ., Guildford
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 08期
关键词：
D O I：
10.1088/0268-1242/8/8/028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present calculations which show that compressive or tensile strain introduced into the well material of InGaAsSb/AlGaSb quantum well lasers reduces the threshold current density compared with double heterostructure and lattice-matched lasers. The operating wavelength can be close to 2.55 mum, the region of lowest attenuation in fluoride glass fibres.
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页码：1655 / 1661
页数：7
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