NON-GEMINATE RADIATIVE RECOMBINATION IN SPUTTERED AND GLOW-DISCHARGE A-SI-H

被引：11

作者：

COLLINS, RW

PAUL, W

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.25.5263

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5263 / 5266

页数：4

共 9 条

[1]

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[8] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON [J].

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[9] INTERPRETATION OF THE CONDUCTANCE AND CAPACITANCE FREQUENCY-DEPENDENCE OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES [J].

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