LARGE REDUCTION OF THE GUNN-EFFECT THRESHOLD FIELD IN A STRONG MAGNETIC-FIELD

[1] ALBER YI, 1977, SOV PHYS JETP, V45, P539

[2] ANDRONOV AA, J PHYS C

[3] ANDRONOV AA, 1980, 4TH S PLASM INST SEM, P107

[4] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J]. PHYSICAL REVIEW B, 1976, 14 (12) : 5331 - 5343

[5] GORFINKEL VB, 1979, SOV PHYS SEMICOND+, V13, P331

[6] DECREASE OF APPARENT THRESHOLD OF GUNN EFFECT BY TRANSVERSE MAGNETIC FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1597 - +

[7] HOT-ELECTRON RELAXATION EFFECTS IN DEVICES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 61 - 67

[8] LEVINSHTEIN ME, 1979, SOV PHYS SEMICOND+, V13, P735

[9] HOT-ELECTRON POPULATION INVERSION IN CROSSED ELECTRIC AND MAGNETIC-FIELDS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 33 (02) : 562 - &

[10] REED HD, 1969, IBM J RES DEV, V13, P537

[1] ALBER YI, 1977, SOV PHYS JETP, V45, P539

[2] ANDRONOV AA, J PHYS C

[3] ANDRONOV AA, 1980, 4TH S PLASM INST SEM, P107

[4] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J]. PHYSICAL REVIEW B, 1976, 14 (12) : 5331 - 5343

[5] GORFINKEL VB, 1979, SOV PHYS SEMICOND+, V13, P331

[6] DECREASE OF APPARENT THRESHOLD OF GUNN EFFECT BY TRANSVERSE MAGNETIC FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1597 - +

[7] HOT-ELECTRON RELAXATION EFFECTS IN DEVICES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 61 - 67

[8] LEVINSHTEIN ME, 1979, SOV PHYS SEMICOND+, V13, P735

[9] HOT-ELECTRON POPULATION INVERSION IN CROSSED ELECTRIC AND MAGNETIC-FIELDS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 33 (02) : 562 - &

[10] REED HD, 1969, IBM J RES DEV, V13, P537