MAGNETOTRANSPORT IN LATERAL PERIODIC POTENTIALS FORMED BY SURFACE-LAYER-INDUCED MODULATION IN INAS-ALSB QUANTUM-WELLS

被引：5

作者：

NGUYEN, C ^{[1
]}

BRAR, B ^{[1
]}

JAYARAMAN, V ^{[1
]}

LORKE, A ^{[1
]}

KROEMER, H ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 16期

关键词：

D O I：

10.1063/1.110543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the realization of strong lateral superlattice potentials in not-intentionally doped InAs-AlSb quantum wells. By spatially alternating the surface layer between thin layers of InAs and GaSb, which shift the pinning position of the Fermi level at the surface, we induce a lateral density modulation of 4 X 10(11) cm-2, equivalent to a potential modulation of 30 meV inside quantum wells 20 nm away from the surface. Both one- and two-dimensional lateral potentials were fabricated and studied by magnetotransport measurements. Strong commensurability oscillations are observed.

引用

页码：2251 / 2253

页数：3

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