RADIATION-INDUCED DEFECTS IN SILICON AT ROOM-TEMPERATURE

被引：7
|
作者：
PASEMANN, M
WERNER, P
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 58卷 / 01期
关键词：
D O I：
10.1002/pssa.2210580141
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：K1 / &
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