RADIATION-INDUCED DEFECTS IN SILICON AT ROOM-TEMPERATURE

被引：7
|
作者：
PASEMANN, M
WERNER, P
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 58卷 / 01期
关键词：
D O I：
10.1002/pssa.2210580141
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K1 / &
相关论文
共 50 条
  • [31] Annealing of radiation-induced defects in silicon in a simplified phenomenological model
    Lazanu, S
    Lazanu, I
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 183 (3-4): : 383 - 390
  • [32] RADIATION-INDUCED ROD-LIKE DEFECTS IN SILICON AND GERMANIUM
    BARTSCH, H
    HOEHL, D
    KASTNER, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02): : 543 - 551
  • [33] Radiation-induced defects in p-type silicon carbide
    Kanazawa, S
    Okada, M
    Nozaki, T
    Shin, K
    Ishihara, S
    Kimura, I
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 521 - 524
  • [34] Radiation-induced defects in p-type silicon carbide
    Kanazawa, S.
    Okada, M.
    Nozaki, T.
    Shin, K.
    Ishihara, S.
    Kimura, I.
    Materials Science Forum, 2002, 389-393 (01) : 521 - 524
  • [35] TRANSIENT CAPACITANCE MEASUREMENTS OF LASER RADIATION-INDUCED DEFECTS IN SILICON
    TAN, HS
    NG, SC
    WOON, HS
    HULTQUIST, G
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (07) : 657 - 662
  • [36] EFFECT OF SILICON SURFACE DEFECTS ON RADIATION-INDUCED INTERFACE STATES
    HUGHES, HL
    SOLID STATE TECHNOLOGY, 1976, 19 (08) : 51 - 51
  • [37] THE MECHANISM OF RADIATION-ENHANCED DIFFUSION OF OXYGEN IN SILICON AT ROOM-TEMPERATURE
    OATES, AS
    BINNS, MJ
    NEWMAN, RC
    TUCKER, JH
    WILKES, JG
    WILKINSON, A
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (32): : 5695 - 5705
  • [38] Room-temperature quantum microwave emitters based on spin defects in silicon carbide
    Kraus H.
    Soltamov V.A.
    Riedel D.
    Väth S.
    Fuchs F.
    Sperlich A.
    Baranov P.G.
    Dyakonov V.
    Astakhov G.V.
    Nature Physics, 2014, 10 (2) : 157 - 162
  • [39] Room-temperature quantum microwave emitters based on spin defects in silicon carbide
    Kraus, H.
    Soltamov, V. A.
    Riedel, D.
    Vaeth, S.
    Fuchs, F.
    Sperlich, A.
    Baranov, P. G.
    Dyakonov, V.
    Astakhov, G. V.
    NATURE PHYSICS, 2014, 10 (02) : 157 - 162
  • [40] Room-temperature migration and interaction of ion beam generated defects in crystalline silicon
    Privitera, V
    Coffa, S
    Priolo, F
    Larsen, KK
    Mannino, G
    APPLIED PHYSICS LETTERS, 1996, 68 (24) : 3422 - 3424
12345