THE REACTION OF TRIETHYLGALLIUM AND TRIMETHYLGALLIUM WITH GAAS(100)

被引:0
|
作者
BANSE, BA [1 ]
CREIGHTON, JR [1 ]
机构
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
来源
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1991年 / 201卷
关键词
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:288 / COLL
相关论文
共 50 条
  • [31] THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS(100) IN THE PRESENCE OF AL AND IN
    FITZGERALD, ET
    FOORD, JS
    SURFACE SCIENCE, 1992, 278 (1-2) : 121 - 130
  • [32] SURFACE STUDIES OF THE THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS (100)
    MURRELL, AJ
    WEE, ATS
    FAIRBROTHER, DH
    SINGH, NK
    FOORD, JS
    DAVIES, GJ
    ANDREWS, DA
    JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) : 199 - 202
  • [33] THERMODYNAMIC STUDY OF ALKYLGALLIUM DERIVATIVES AND TRIMETHYLGALLIUM TRIETHYLGALLIUM MIXTURES
    BAEV, AK
    SOKOLOVSKII, AE
    RUSSIAN JOURNAL OF APPLIED CHEMISTRY, 1994, 67 (09) : 1296 - 1300
  • [34] MASS-SPECTROMETRIC STUDY OF THE REACTION OF TRIMETHYLGALLIUM AND GAAS
    OHKI, Y
    HIRATANI, Y
    JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) : 77 - 80
  • [35] Comparison of Triethylgallium and Trimethylgallium Precursors for GaInP Nanowire Growth
    Alcer, David
    Saxena, Aditya P.
    Hrachowina, Lukas
    Zou, Xianshao
    Yartsev, Arkady
    Borgstrom, Magnus T.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2021, 258 (02):
  • [36] A simple synthesis of non-solvated trimethylgallium and triethylgallium
    Zakharkin, LI
    Gavrilenko, VV
    SYNTHESIS AND REACTIVITY IN INORGANIC AND METAL-ORGANIC CHEMISTRY, 1999, 29 (07): : 1243 - 1247
  • [37] LOW-CARBON INCORPORATION IN GAAS GROWN BY CHEMICAL BEAM EPITAXY USING UNPRECRACKED ARSINE, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM
    PARK, SJ
    RO, JR
    SIM, JK
    LEE, EH
    JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 143 - 147
  • [38] KINETICS OF THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS(100) AND IMPLICATIONS FOR GAAS FILM GROWTH
    DONNELLY, VM
    MCCAULLEY, JA
    ROBERTSON, AA
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 202 : 68 - COLL
  • [39] Direct evidence for the β-hydride elimination mechanism in the decomposition of triethylgallium on GaAs(100)
    Wong, KC
    McEllistrem, MT
    McBurnett, BG
    Culp, RD
    Cowley, AH
    Ekerdt, JG
    SURFACE SCIENCE, 1998, 396 (1-3) : 260 - 265
  • [40] MONOETHYLARSINE AS A NOVEL REPLACEMENT FOR UNPRECRACKED ARSINE SOURCE IN THE CHEMICAL BEAM EPITAXIAL-GROWTH OF GAAS USING TRIMETHYLGALLIUM AND TRIETHYLGALLIUM
    PARK, SJ
    RO, JR
    SIM, JK
    LEE, EH
    JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 138 - 142