AC CONDUCTION OF THE HEAVILY DOPED GLOW-DISCHARGE AMORPHOUS-SILICON FILMS

被引：4

作者：

NITTA, S

SHIMAKAWA, K

NONOMURA, S

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90617-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：339 / 344

页数：6

共 9 条

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[7] AC CONDUCTION IN GLOW-DISCHARGE AMORPHOUS SILICON FILMS [J].

NITTA, S ;

SHIMAKAWA, K ;

SAKAGUCHI, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1977, 24 (01) :137-140

[8] AC CONDUCTIVITY OF SCANDIUM OXIDE AND A NEW HOPPING MODEL FOR CONDUCTIVITY [J].

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[9] LOCALIZED GAP STATES IN AMORPHOUS-SEMICONDUCTORS ESTIMATED BY DIELECTRIC-RELAXATION [J].

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