ELECTRIC-FIELD DEPENDENCE OF SURFACE DIPOLE OF SEMICONDUCTORS

被引:5
作者
FISCHER, TE
VILJOEN, PE
机构
关键词
D O I
10.1103/PhysRevLett.26.549
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:549 / &
相关论文
共 13 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]  
Busch G., 1963, PHYS KONDENS MATER, V1, P367
[3]   GIANT TEMPERATURE DEPENDENCE OF WORK FUNCTION OF GAP [J].
CHO, AY ;
ARTHUR, JR .
PHYSICAL REVIEW LETTERS, 1969, 22 (22) :1180-&
[4]  
DINAN JH, TO BE PUBLISHED
[5]  
FISCHER TE, 1969, SURFACE SCI, V13, P31
[6]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[7]  
GOBELI GW, 1965, PHYS REV, V137, pA246
[8]   SURFACE STATES ON CLEAN SILICON [J].
HEILAND, G ;
LAMATSCH, H .
SURFACE SCIENCE, 1964, 2 :18-25
[9]   SURFACE STATES ON CLEAVED SILICON [J].
PALMER, DR ;
DAUENBAUGH, CE ;
MORRISON, SR .
PHYSICAL REVIEW LETTERS, 1961, 6 (04) :170-&
[10]  
ROWE JE, 1970, 10TH P INT C PHYS SE, P217