A SILICON-ON-INSULATOR STRUCTURE FORMED BY IMPLANTATION OF MEGAELECTRONVOLT OXYGEN

被引：7

作者：

GROB, JJ ^{[1
]}

GROB, A ^{[1
]}

THEVENIN, P ^{[1
]}

SIFFERT, P ^{[1
]}

GOLANSKI, A ^{[1
]}

DANTERROCHES, C ^{[1
]}

机构：

[1] CTR NATL ETUDES TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 2卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(89)90086-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：123 / 129

页数：7

共 22 条

[1]

ARMINI AJ, COMPUTER CODE PROFIL

[2] HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J].

CELLER, GK ;

HEMMENT, PLF ;

WEST, KW ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :532-534

[3] BACKSCATTERING STUDY ON LATERAL SPREAD OF IMPLANTED IONS [J].

FURUKAWA, S ;

MATSUMURA, H .

APPLIED PHYSICS LETTERS, 1973, 22 (03) :97-98

[4] INFLUENCE OF OXYGEN IMPLANTATION CONDITIONS ON THE PROPERTIES OF A HIGH-TEMPERATURE-ANNEALED SILICON-ON-INSULATOR MATERIAL [J].

GOLANSKI, A ;

PERIO, A ;

GROB, JJ ;

STUCK, R ;

MAILLET, S ;

CLAVELIER, E .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1423-1425

[5]

GRANT WA, 1976, ION BEAM SURFACE LAY, P235

[6]

HOLLAND OW, 1985, APPL PHYS LETT, V45, P1081

[7]

JASSAUD C, 1985, APPL PHYS LETT, V46, P1064

[8] RANGE AND DAMAGE PROFILING AFTER HEAVY-ION IMPLANTATION IN MEV REGION [J].

KAPPERT, HF ;

HEIDEMANN, KF ;

GRABE, B ;

TEKAAT, E .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 47 (02) :751-762

[9]

Lindhard J., 1963, MAT FYS MEDD K DAN V, V33

[10] MICROSTRUCTURE OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR [J].

MAO, BY ;

CHANG, PH ;

LAM, HW ;

SHEN, BW ;

KEENAN, JA .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :794-796

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