2-STEP ANNEALING TECHNIQUE FOR LEAKAGE CURRENT REDUCTION IN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILM

被引：46

作者：

SHINRIKI, H

NAKATA, M

NISHIOKA, Y

MUKAI, K

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 11期

关键词：

D O I：

10.1109/55.43121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：514 / 516

页数：3

共 8 条

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[2]

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[4] ULTRA-THIN TA2O5 DIELECTRIC FILM FOR HIGH-SPEED BIPOLAR MEMORIES [J].

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[5] OXIDIZED TA2O5/SI3N4 DIELECTRIC FILMS ON POLYCRYSTALLINE SI FOR DRAMS [J].

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MUKAI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :328-332

[6] A CORRUGATED CAPACITOR CELL (CCC) [J].

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ASAI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :746-753

[7] PHOTO-CVD OF TANTALUM OXIDE FILM FROM PENTAMETHOXY TANTALUM FOR VLSI DYNAMIC MEMORIES [J].

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[8]

Yugami J., 1988, Extended Astracts of the 20th (1988 International) Conference on Solid State Devices and Materials, P173

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