共 32 条
[1]
BALKANSKI M, 1963, J PHYS SOC JAPAN S2, V18, P37
[3]
BRODSKY MH, 1977, APPL PHYS LETT, V30, P581
[6]
CHEN CS, 1973, RAD DAMAGE DEFECTS S, P210
[7]
1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY
[J].
PHYSICAL REVIEW,
1966, 152 (02)
:761-+
[8]
NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON
[J].
PHYSICAL REVIEW,
1964, 135 (5A)
:1381-+
[10]
DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER
[J].
PHYSICAL REVIEW,
1961, 121 (04)
:1015-&