DOPING OF CHALCOGENIDE GLASSES IN THE GE-SE AND GE-TE SYSTEMS

被引：88

作者：

NAGELS, P ^{[1
]}

ROTTI, M ^{[1
]}

VIKHROV, S ^{[1
]}

机构：

[1] RYAZAN RADIO ENGN INST,RYAZAN,USSR

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814197

中图分类号：

学科分类号：

摘要：

引用

页码：907 / 910

页数：4

共 9 条

[1] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].

DAVIS, EA ;

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&

[2] EFFECT OF ELECTRONEGATIVITY DIFFERENCE ON DEFECT CHEMISTRY IN LONE-PAIR SEMICONDUCTORS [J].

FRITZSCHE, H ;

GACZI, PJ ;

KASTNER, M .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (05) :593-600

[3] EFFECT OF CHARGED ADDITIVES ON CARRIER CONCENTRATIONS IN LONE-PAIR SEMICONDUCTORS [J].

FRITZSCHE, H ;

KASTNER, M .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03) :285-292

[4]

KASTNER M, 1978, PHILOS MAG, V37, P127, DOI 10.1080/13642817808245313

[5] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

ADLER, D ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507

[6] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

MOTT, NF ;

DAVIS, EA ;

STREET, RA .

PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996

[7] INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1976, 34 (06) :1101-1108

[8] ELECTRICAL TRANSPORT IN N-TYPE SEMICONDUCTING GE20BIXSE70-XTE10 GLASSES [J].

TOHGE, N ;

MINAMI, T ;

TANAKA, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 37 (01) :23-30

[9] ELECTRICAL AND OPTICAL-PROPERTIES OF N-TYPE SEMICONDUCTING CHALCOGENIDE GLASSES IN THE SYSTEM GE-BI-SE [J].

TOHGE, N ;

MINAMI, T ;

YAMAMOTO, Y ;

TANAKA, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1048-1053

← 1 →