PHOTOELECTRICAL PROPERTIES OF INHOMOGENEOUS SINGLE ZNSE CRYSTALS

被引：0

作者：

BIRCHAK, I ^{[1
]}

SERDYUK, VV ^{[1
]}

CHEMERESYUK, GG ^{[1
]}

机构：

[1] II MECHNIKOV STATE UNIV, ODESSA, UKSSR

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1974年 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：143 / 145

页数：3

共 8 条

[1] HIGH ELECTRON MOBILITY IN ZINC SELENIDE THROUGH LOW-TEMPERATURE ANNEALING
AVEN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1204 - &
[2] Gorodetskii I. Ya., 1967, FIZ TEKH POLUPROV, V1, P1666
[3] Markovskii L. Ya., 1969, Optics and Spectroscopy, V27, P167
[4] A UNIFIED APPROACH TO THE THEORY OF SPACE-CHARGE-LIMITED CURRENTS IN AN INSULATOR WITH TRAPS
MULLER, RS
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (01) : 25 - 32
[5] SEISHI I, 1969, J PHYS SOC JPN, V26, P1140
[6] Sheinkman M. K., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1635
[7] PHOTOELECTRONIC PROPERTIES OF ZNSE CRYSTALS
STRINGFELLOW, GB
BUBE, RH
[J]. PHYSICAL REVIEW, 1968, 171 (03): : 903 - +
[8] VUDS D, 1971, T FIZIKE POLUPROVODN, V3, P58