IMPEDANCE OF A P-N-JUNCTION WITH HOT CARRIERS

被引：0

作者：

DADAMIRZAEV, G

GULYAMOV, G

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：325 / 326

页数：2

共 50 条

[1] CURRENT OF HOT CARRIERS ACROSS A P-N-JUNCTION
MARMUR, IY
OKSMAN, YA
SEMENOV, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1441 - 1441
[2] AMPLIFICATION OF THE CURRENT IN A P-N-JUNCTION WITH HOT CARRIERS
BOCHKAREVA, NI
VEINGER, AI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (03): : 328 - 331
[3] AMPLIFICATION IN A P-N-JUNCTION IN SILICON CONTAINING HOT CARRIERS
VEINGER, AI
KOCHARYAN, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 956 - 957
[4] CURRENT-VOLTAGE CHARACTERISTICS OF A P-N-JUNCTION WITH HOT CARRIERS
VEINGER, AI
GNILOV, SV
SARGSYAN, MP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (02): : 183 - 185
[5] THERO-PHOTOELECTRIC EFFECTS IN A P-N-JUNCTION WITH HOT CARRIERS
DADAMIRZAEV, G
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (11): : 1344 - 1346
[6] NEGATIVE-RESISTANCE IN A CIRCUIT CONTAINING A P-N-JUNCTION WITH HOT CARRIERS
VEINGER, AI
AKOPYAN, EA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 708 - 710
[7] INFLUENCE OF LIGHT ON THE OPERATION OF A P-N-JUNCTION WITH HOT CARRIERS IN THE CHARGE ACCUMULATION REGIME
AKOPYAN, EA
VEINGER, AI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (08): : 968 - 969
[8] THERMOELECTRIC EMF OF HOT CARRIERS IN A P-N-JUNCTION UNDER LATTICE HEATING CONDITIONS
GULYAMOV, G
SHAMIRZAEV, SK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1082 - 1084
[9] INFLUENCE OF DEFECTS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF A P-N-JUNCTION WITH HOT CARRIERS
VEINGER, AI
SARGSYAN, MP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 704 - 705
[10] OSCILLATIONS IN A HOT-CARRIER P-N-JUNCTION
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KOCHARYAN, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 389 - 392

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