ELECTRONIC-STRUCTURE ANALYSIS BY LOW-ENERGY POSITRON DIFFRACTION

被引：12
|
作者：
JOLY, Y
机构：
[1] Laboratoire de Cristallographie, Centre Nationale de la Recherche Scientifique, F-38042 Grenoble Cedex
来源：
PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 03期
关键词：
D O I：
10.1103/PhysRevLett.72.392
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The first analysis of the electronic configuration at the surface of a monocrystal using low-energy positron diffraction (LEPD) is presented. This is done in conjunction with a standard structure determination for the GaAs(110) surface. Such an extension of the possibilities of LEPD is made possible by the use of the finite-difference method formalism. In addition to the improvement of the experiment-theory agreement for diffracted beam intensities, this technique provides a real cartography in three dimensions of the electronic density in the first atomic layers.
引用
收藏
页码：392 / 395
页数：4
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