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CURRENT CONTROLLED LIQUID-PHASE EPITAXIAL-GROWTH OF HG1-XCDXTE
被引:17
|
作者
:
VANIER, PE
论文数:
0
引用数:
0
h-index:
0
机构:
YESHIVA UNIV,BELFER GRAD SCH SCI,NEW YORK,NY 10033
YESHIVA UNIV,BELFER GRAD SCH SCI,NEW YORK,NY 10033
VANIER, PE
[
1
]
POLLAK, FH
论文数:
0
引用数:
0
h-index:
0
机构:
YESHIVA UNIV,BELFER GRAD SCH SCI,NEW YORK,NY 10033
YESHIVA UNIV,BELFER GRAD SCH SCI,NEW YORK,NY 10033
POLLAK, FH
[
1
]
RACCAH, PM
论文数:
0
引用数:
0
h-index:
0
机构:
YESHIVA UNIV,BELFER GRAD SCH SCI,NEW YORK,NY 10033
YESHIVA UNIV,BELFER GRAD SCH SCI,NEW YORK,NY 10033
RACCAH, PM
[
1
]
机构
:
[1]
YESHIVA UNIV,BELFER GRAD SCH SCI,NEW YORK,NY 10033
来源
:
JOURNAL OF ELECTRONIC MATERIALS
|
1980年
/ 9卷
/ 01期
关键词
:
D O I
:
10.1007/BF02655221
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:153 / 164
页数:12
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