LOCAL DENSITY OF STATES OF SILICON IMPURITY IN LIGHTLY AND HEAVILY DOPED ALAS/GAAS SUPERLATTICES

被引：4

作者：

WANG, EG ^{[1
]}

ZHANG, LY ^{[1
]}

WANG, HY ^{[1
]}

机构：

[1] BEIJING UNIV,DEPT PHYS,BEIJING 100871,PEOPLES R CHINA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 5卷 / 03期

关键词：

D O I：

10.1016/0921-5107(90)90101-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The local and partial densities of states in lightly and heavily silicon-doped [100] thin (AlAs)n/(GaAs)n (n = 1, 2 or 3) superlattices have been calculated by means of a tight-binding approximation. A comparative study has been made of the electronic properties of these materials. From a discussion of the Fermi energy and atomic valence, we show in detail the influence of silicon on neighbouring atoms. © 1990.

引用

页码：371 / 375

页数：5

共 20 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2] HYDROGENIC IMPURITY STATES IN A QUANTUM WELL - A SIMPLE-MODEL [J].