FACTORS INFLUENCING THE PRESENCE AND DETECTION OF COMPOSITIONAL GRADING AT SEMICONDUCTOR HETERO-EPITAXIAL INTERFACES

被引：15

作者：

LYONS, MH

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 02期

关键词：

D O I：

10.1016/0022-0248(89)90531-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：339 / 347

页数：9

共 17 条

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[8] VAPOR-PHASE GROWTH OF MIXED III-V-COMPOUNDS IN THE GA-IN-AS-P SYSTEM [J].

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[10]

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