OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS

被引：297

作者：

LANG, DV ^{[1
]}

KIMERLING, LC ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 33卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.33.489

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：489 / 492

页数：4

共 16 条

[1] EFFECTS OF CO-60 GAMMA IRRADIATION ON EPITAXIAL GAAS LASER DIODES [J].

BARNES, CE .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12) :4735-+

[2] NEW MECHANISM FOR INTERSTITIAL MIGRATION [J].

BOURGOIN, JC ;

CORBETT, JW .

PHYSICS LETTERS A, 1972, A 38 (02) :135-&

[3] INJECTION-STIMULATED VACANCY REORDERING IN P-TYPE SILICON AT 76DEGREESK [J].

GREGORY, BL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3765-&

[4] DEGRADATION AND PASSIVATION OF GAP LIGHT-EMITTING DIODES [J].

HARTMAN, RL ;

SCHWARTZ, B ;

KUHN, M .

APPLIED PHYSICS LETTERS, 1971, 18 (07) :304-&

[5] ANNEALING OF ELECTRON-IRRADIATED N-TYPE SILICON .1. DONOR CONCENTRATION DEPENDENCE [J].

KIMERLING, LC ;

DEANGELIS, HM ;

CARNES, CP .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :427-+

[6]

KIMERLING LC, 1974, B AM PHYS SOC, V19, P210

[7] ANNEALING OF ELECTRON-IRRADIATED N-TYPE SILICON - ILLUMINATION AND FLUENCE DEPENDENCE [J].

KIMERLING, LC ;

CARNES, CP .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3548-+

[8]

KIMERLING LC, UNPUBLISHED

[9] PHYSICAL BASIS OF NONCATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].

KRESSEL, H ;

BYER, NE .

PROCEEDINGS OF THE IEEE, 1969, 57 (01) :25-&

[10]

LANG DV, 1974, B AM PHYS SOC, V19, P298

← 1 2 →