SIOX SURFACE STOICHIOMETRY BY XPS - A COMPARISON OF VARIOUS METHODS

被引：95

作者：

ALFONSETTI, R ^{[1
]}

DESIMONE, G ^{[1
]}

LOZZI, L ^{[1
]}

PASSACANTANDO, M ^{[1
]}

PICOZZI, P ^{[1
]}

SANTUCCI, S ^{[1
]}

机构：

[1] UNIV LAQUILA,DIPARTIMENTO FIS,I-67100 LAQUILA,ITALY

来源：

SURFACE AND INTERFACE ANALYSIS | 1994年 / 22卷 / 1-12期

关键词：

D O I：

10.1002/sia.740220122

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface stoichiometry of SiO(x) thin films (x = 1,...,2) has been determined by means of x-ray photoelectron spectroscopy using: (a) two well established methods involving the determination of the area of the O 1s and Si 2p core level peaks and the analysis of the Si 2p line shape, respectively, and (b) the method of the modified Auger parameter recently suggested. The agreement between the different approaches for determination of the stoichiometry of the films indicates the modified Auger parameter procedure as an easy, fast and very reliable method to ascertain the surface stoichiometry of SiO(x) films.

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页码：89 / 92

页数：4

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