HIGH-PERFORMANCE BURIED-GATE MOSFETS WITH RTO-GROWN ULTRATHIN GATE OXIDE-FILMS

被引：0

作者：

OCHIAI, T

FUKUDA, H

HAYASHI, T

IWABUCHI, T

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., Hachioji, Tokyo 193

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 01期

关键词：

MOSFETS; RAPID-THERMAL-PROCESSING; OXIDATION;

D O I：

10.1049/el:19940031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors propose a novel buried-gate-type MOSFET (BG-MOSFET) with ultrathin gate oxide films formed by rapid thermal oxidation (RTO) technology. The BG-MOSFET fabricated showed good punchthrough characteristics and much smaller hot-carrier degradation. The optimum trench depth is similar to 0.1-0.2 mu m deeper than source/drain junction depth considering current gain, avalanche breakdown voltage and hot-carrier immunity.

引用

页码：87 / 89

页数：3

共 4 条

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