VARIABLE-RANGE-HOPPING AND POSITIVE MAGNETORESISTANCE IN INSULATING Y1-XPRXBA2CU3O7 CRYSTALS

被引：36
|
作者：
JIANG, W
PENG, JL
HAMILTON, JJ
GREENE, RL
机构：
[1] Center for Superconductivity Research, Department of Physics, University of Maryland, College Park
来源：
PHYSICAL REVIEW B | 1994年 / 49卷 / 01期
关键词：
D O I：
10.1103/PhysRevB.49.690
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have measured in-plane resistivity and magnetoresistance of insulating Y1-xPrxBa2Cu3O7 (x approximately 0.63) crystals in magnetic fields up to 8 T. Mott variable-range-hopping transport rho=rho0 exp{(T0/T)alpha} has been observed with alpha=1/4 at low temperatures suggesting the metal-insulator transition caused by Pr doping is due to carrier localization. The magnetoresistance in the Mott variable-range-hopping regime is found to be positive and anisotropic, which may be caused by a decrease of the localiztion length induced by the magnetic field.
引用
收藏
页码：690 / 693
页数：4
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