PROPERTIES OF SN/GE SUPERLATTICES

被引：5

作者：

ABSTREITER, G

OLAJOS, J

SCHORER, R

VOGL, P

WEGSCHEIDER, W

机构：

[1] TECH UNIV MUNICH,DEPT PHYS,W-8046 GARCHING,GERMANY

[2] UNIV LUND,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期

关键词：

D O I：

10.1088/0268-1242/8/1S/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Short-period strained-layer alpha-Sn/Ge superlattices have been synthesized recently by a low temperature molecular beam epitaxy technique which allows a large variation of substrate temperature. Thin, tetragonally distorted alpha-Sn layers have been stabilized on Ge substrates by growth conditions far away from thermal equilibrium. The fundamental bandgap of Sn/Ge superlattices is shifted towards lower energies with increasing average Sn concentration, as expected from theory.

引用

页码：S6 / S8

页数：3

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