SUBNANOSECOND BIMOLECULAR NONRADIATIVE RECOMBINATION IN A-SI-H

We have introduced a new method of the study of fast recombination in a-Si:H, based on the measurement of the extraction time of the charge carrier reservoir generated by a short intensive light pulse. We demonstrate the advantages of the integral mode of the measurement of these photo-SCLC transients. We have found a clear transition from monomolecular to bimolecular recombination at a generation rate of about 10(18) cm(-3). The deduced coefficient of the bimolecular recombination is smaller than the same coefficient found from optical pump and probe measurements. To explain the experimental results we propose a model based on the Auger recombination of two free and one trapped charge carriers.