Growth and Characterisation of Al1-x CrxN Thin Films by RF Plasma Assisted Pulsed Laser Deposition

被引：5

作者：

Arnold, Brendan J. ^{[1
]}

Krishnamurthy, Satheesh ^{[1
]}

Kennedy, Brian ^{[1
]}

Cockburn, Declan ^{[1
]}

McNally, Daniel ^{[1
]}

Lunney, James G. ^{[1
]}

Gunning, Robbie ^{[1
]}

Venkatesan, M. ^{[1
]}

Alaria, J. ^{[1
]}

Michael, J. ^{[1
]}

Coey, D. ^{[1
]}

McGuinnesst, Cormac ^{[1
]}

Guo, J. -H. ^{[2
]}

机构：

[1] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland

[2] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2009年 / 7卷

基金：

爱尔兰科学基金会;

关键词：

Nitrides; Single crystal epitaxy; Near edge extended x-ray absorption fine structure (NEXAFS); X-ray emission; Pulsed laser deposition;

D O I：

10.1380/ejssnt.2009.497

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin films of AlN, CrN and Al1-xCrxN were grown epitaxially on c-cut sapphire by radio frequency (RF) plasma assisted pulsed laser deposition (PLD). The PLD growth mode employed for these Al1-xCrxN films was by delta doping layers of CrN 0.05-0.10 nm thick between layers of AlN of approximately 3.6 nm thick giving an estimated 1.3% and 2.5% Cr doping. The substrate temperature, nitrogen pressure and power parameters of the RF plasma were varied to optimize crystalline growth. X-ray diffraction (XRD) confirmed hexagonal wurtzite thin film growth of highly crystalline AlN and highly crystalline cubic CrN. The electronic structure of these thin films was examined by x-ray absorption (XAS) and soft x-ray emission spectroscopy (XES) at the N K edge. These measurements are compared with the results of density functional calculations for wurtzite-AlN, cubic-CrN and wurtzite-Al1-xCrxN.

引用

页码：497 / 502

页数：6

共 19 条

[1] Improvement of the PLD process assisted by RF plasma for AlN growth [J].