LASER-DIODE-PUMPED CR-LISRGAF6 LASER

被引：8
|
作者：
SCHEPS, R
机构：
[1] Naval Ocean Systems Center, Code 754, San Diego
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 06期
关键词：
D O I：
10.1109/68.141963
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Diode-pumped operation of a Cr:LiSrGaF6 laser is described. Efficient performance was obtained between 810 and 855 nm. The maximum output power was 130 mW at 810 nm, and the slope efficiency was 26%. The sample was pumped with a total incident power of 560 mW using two polarization-combined high power visible laser diodes. These results represent the highest CW power reported for a diode-pumped Cr-doped laser.
引用
收藏
页码：548 / 550
页数：3
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