IMPROVED DRIFT IN 2-PHASE, LONG-CHANNEL, SHALLOW BURIED-CHANNEL CCDS WITH LONGITUDINALLY NONUNIFORM STORAGE-GATE IMPLANTS

被引：2

作者：

LATTES, AL ^{[1
]}

MUNROE, SC ^{[1
]}

SEAVER, MM ^{[1
]}

MURGUIA, JE ^{[1
]}

MELNGAILIS, J ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 07期

关键词：

D O I：

10.1109/16.141248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-phase buried-channel CCD's with a gradient in the storage wells, generated by a nonuniform channel doping parallel to the surface, were studied at room temperature and at 77 K. The built-in drift fields improve the charge transfer efficiency by more than an order of magnitude, consistently with two-dimensional simulations.

引用

页码：1772 / 1774

页数：3

共 8 条

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