NARROW STRIPE GRADED BARRIER SINGLE QUANTUM-WELL LASERS - THRESHOLD CURRENT CONSIDERATIONS

被引：11

作者：

PATEL, NB

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

D O I：

10.1109/JQE.1987.1073457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：988 / 992

页数：5

共 15 条

[1] THEORY OF GAIN, MODULATION RESPONSE, AND SPECTRAL LINEWIDTH IN ALGAAS QUANTUM WELL LASERS [J].

ARAKAWA, Y ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (10) :1666-1674

[2] LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAIAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANT [J].

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

LINDSTROM, C ;

PAOLI, TL ;

HOLONYAK, N .

ELECTRONICS LETTERS, 1982, 18 (25-2) :1095-1097

[3]

CASEY HC, 1978, HETEROSTRUCTURE LA B

[4] GAIN-INDUCED GUIDING AND ASTIGMATIC OUTPUT BEAM OF GAAS LASERS [J].

COOK, DD ;

NASH, FR .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1660-1672

[5] STRIPED GAAS LASERS - MODE SIZE AND EFFICIENCY [J].

HAKKI, BW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2723-2730

[6] GRADED BARRIER SINGLE QUANTUM WELL LASERS - THEORY AND EXPERIMENT [J].

KASEMSET, D ;

HONG, CS ;

PATEL, NB ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :1025-1030

[7]

KASEMSET D, 1981, APPL PHYS LETT, V41, P912

[8] REFRACTIVE-INDEX DEPENDENCE ON FREE-CARRIERS FOR GAAS [J].

MENDOZAALVAREZ, JG ;

NUNES, FD ;

PATEL, NB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4365-4367

[9] MODE GUIDANCE PARALLEL TO JUNCTION PLANE OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J].

NASH, FR .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4696-4707

[10] MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS [J].

NELSON, RJ ;

SOBERS, RG .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :6103-6108

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