SURFACE KINETIC CONSIDERATIONS FOR MOLECULAR-BEAM EPITAXY GROWTH OF HIGH-QUALITY INVERTED HETEROINTERFACES

被引：4

作者：

NEWMAN, PG ^{[1
]}

CHO, NM ^{[1
]}

KIM, DJ ^{[1
]}

MADHUKAR, A ^{[1
]}

SMITH, DD ^{[1
]}

AUCOIN, TR ^{[1
]}

IAFRATE, GJ ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1483 / 1486

页数：4

共 18 条

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[8] ROLE OF SURFACE MOLECULAR REACTIONS IN INFLUENCING THE GROWTH-MECHANISM AND THE NATURE OF NONEQUILIBRIUM SURFACES - A MONTE-CARLO STUDY OF MOLECULAR-BEAM EPITAXY [J].

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[10] PHOTOLUMINESCENCE AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DYNAMICS STUDY OF THE INTERFACES IN MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AL0.33GA0.67AS(100) SINGLE QUANTUM-WELLS [J].

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